Chemical mechanical polishing conditioner with high performance

ABSTRACT

The present invention relates to a chemical mechanical polishing conditioner with high performance, comprising a substrate; a binding layer disposed on the substrate; and a plurality of abrasive particles fixed directly on the substrate by the binding layer, or each abrasive particle disposed on a metal fixing seat and the substrate have a plurality of blind holes and a plurality of through holes, so that the metal fixing seats are installed into the blind holes or the through holes, and the metal fixing seat fixed on the substrate by the binding layer; wherein the abrasive particles are treated by a surface processing treatment to make the abrasive particles have specific cutting edge angles, crystal structures, tip heights, or tip orientations. Therefore, the present invention can control the profile of each abrasive particle to accomplish the best polishing performance.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefits of the Taiwan Patent ApplicationSerial Number 103105288, filed on Feb. 18, 2014, the subject matter ofwhich is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a chemical mechanical polishingconditioner, and more particularly to a chemical mechanical polishingconditioner including a plurality of abrasive particles which areperformed surface treatments.

2. Description of Related Art

Chemical mechanical polishing (CMP) is a common polishing process invarious industries, which can be used to grind the surfaces of variousarticles, including ceramics, silicon, glass, quartz, or a metal chip.In addition, with the rapid development of integrated circuits, chemicalmechanical polishing becomes one of the common techniques for waferplanarization because it can achieve an object of whole planarization.

During the chemical mechanical polishing process of semiconductor,impurities or uneven structure on the surface of a wafer are removed bycontacting the wafer (or the other semiconductor elements) with apolishing pad and using a polishing liquid if necessary, through thechemical reaction and mechanical force. When the polishing pad has beenused for a certain period of time, the polishing performance andefficiency are reduced because the debris produced in the polishingprocess may accumulate on the surface of the polishing pad. Therefore, aconditioner can be used to condition the surface of the polishing pad,such that the surface of the polishing pad is re-roughened andmaintained at an optimum condition for polishing. In the process formanufacturing a conditioner, it is necessary to dispose an abrasivelayer by mixing abrasive particles and a binding layer on the substratesurface, and to fix the abrasive layer to the surface of the substrateby brazing or sintering methods.

In the known technology, such as Taiwan Patent Issue No. 1306048, itdiscloses that CMP pad dressers with superabrasive particles orientedinto an attitude that controls CMP pad performance, and methodsassociated therewith are disclosed and described. The controlled CMP padperformance may be selected to optimize CMP pad dressing rate anddresser wear. Further, a method for controlling CMP pad dresserperformance in a CMP pad dresser as part of the pad dresser fabricationprocess, the pad dresser employing a plurality of superabrasiveparticles comprising: orienting the superabrasive particles into anattitude that provides an anticipated performance characteristic; andsecuring the securing the superabrasive particles to a substrate in saidattitude.

Besides, in the other known technology, such as Japanese PatentPublication No. 2006130586, it discloses that among a number of diamondabrasive grains, a group of diamond abrasive grains having a higherpercentage content of diamond abrasive grains where the proportion ofarea occupied by crystal orientation 111 face is larger than that of theother faces is selected, and this group of diamond abrasive grains aredispersed in a plating liquid to be plated on the surface 2 of a basematerial 1 dipped in a plating solution, whereby among a number ofdiamond abrasive grains plated on the surface 2 of the base material 1,the proportion of diamond abrasive grains A1, A2, A4 to A6, A8, A9, thecrystal orientation 111 faces (a) of which are oriented substantiallyparallel to the surface 2 of the base material 1 ranges from 65 to 95%,and the X-ray reflection intensity of the crystal orientation 111 faceof the diamond abrasive grains is 2500 CPS or more.

However, in the above-mentioned chemical mechanical polishingconditioner, tip orientations, crystalline forms of abrasive particlesor the abrasive particles are mainly used to form different angles ofinclination, and the tip orientations of the abrasive particles arecontrolled to promote the polishing performance of the conditioner. But,the abrasive particles of the above-mentioned chemical mechanicalpolishing conditioner are limited to their crystal forms, such ashexoctahedron, so that cutting edge angles of the abrasive particlescannot avoid the fixing cutting edge angles due to their structures.Therefore, there is an urgent need for a chemical mechanical polishingconditioner with high performance, which is used to control profiles ofeach abrasive particle to achieve an optimum polishing performance.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a chemical mechanicalpolishing conditioner with high performance, which is used to controlprofiles of each abrasive particle to achieve an optimum ability ofcutting. Besides, the abrasive particles can avoid limitations of theircrystal form based on a condition of profiles of each abrasive particleto obtain an optimum cutting edge angle.

To achieve the above object, the present invention provides a chemicalmechanical polishing conditioner with high performance, comprising: asubstrate; a binding layer disposed on the substrate; and a plurality ofabrasive particles fixed directly on the substrate by the binding layer,or each abrasive particle disposed on a metal fixing seat; wherein thesubstrate have a plurality of blind holes or a plurality of throughholes, so that the metal fixing seats are installed into the blind holesor the through holes, and the metal fixing seat are fixed on thesubstrate by the binding layer; wherein the abrasive particles aretreated by a surface processing treatment, so that the abrasiveparticles have specific cutting edge angles, crystal structures, tipheights, or tip orientations. Further, the cutting edge angles, crystalstructures, tip heights, or tip orientations may be randomly variedbased on the user's requirements or processing conditions;alternatively, the abrasive particles are not treated by a surfaceprocessing treatment, so that the abrasive particles are formed by aspecific ration or a specific arrangement to control the surfacecharacteristics of the polishing pad. The present invention is differentform a traditional chemical mechanical polishing conditioner of whichthe polishing performance are limited to their crystal forms, such ashexoctahedron, of the abrasive particles (artificial diamonds orsynthetic diamond). The chemical mechanical polishing conditioner withhigh performance of the present invention can be designed to theabrasive particles with specific profiles, so that the polishingperformance is not limited to their crystal forms, such ashexoctahedron.

In the chemical mechanical polishing conditioner with high performanceof the present invention, the present invention is different from theoriginal artificial diamonds which can only have the cutting edge angleof 70 degree or 90 degree. The cutting edge angle of theses abrasiveparticles may be randomly varied based on the user's requirements orpolishing processing conditions; wherein the cutting edge angle oftheses abrasive particles may be 30 degree to 150 degree, and in anaspect of the present invention, the cutting edge angle of thesesabrasive particles may be 60 degree to 90 degree. Besides, in thechemical mechanical polishing conditioner with high performance of thepresent invention, the crystal structure of these abrasive particles maybe randomly varied based on a surface processing treatment and theuser's requirements or polishing processing conditions; wherein thecrystal structure of these abrasive particles may be a tetrahedron, ahexahedron, an octahedron, or the other shape with specific cuttingfunction, but the present invention is not limited thereto. In an aspectof the present invention, the crystal structure of these abrasiveparticles may be a hexahedron. Besides, in the chemical mechanicalpolishing conditioner with high performance of the present invention,the substrate has a plurality of blind holes or a plurality of throughholes, so that the metal fixing seats are installed into the blind holesor the through holes.

In the chemical mechanical polishing conditioner with high performanceof the present invention, the tip heights of these abrasive particlesmay be randomly varied based on the user's requirements or polishingconditions, so that these abrasive particles may have the same tipheights, or theses abrasive particles may have different tip heights. Inan aspect of the present invention, these abrasive particles may havethe same tip heights; alternatively, these abrasive particles arecontrolled by metal fixing seats with different protrusion heights, sothat these abrasive particles have the same tip heights. In anotheraspect of the present invention, the abrasive particles may havedifferent tip heights; wherein the abrasive particles may have differenttips through surface treatments; alternatively, the abrasive particlesare controlled by metal fixing seats with different protrusion heights,so that these abrasive particles have different tip heights.

In the chemical mechanical polishing conditioner with high performanceof the present invention, each abrasive particle may be fixed on themetal fixing seats by an abrasive binding layer; wherein these abrasiveparticles may have plane bottoms or non-plane bottoms, and the metalfixing seat may have a plane top or blind holes at the top. In an aspectof the present invention, theses abrasive particles having plane bottomsmay be disposed on the fixing seats having plane tops, so that thesesabrasive particles having plane bottoms are corresponded with the metalfixing seats having the plane tops. Besides, theses abrasive particleshaving plane bottoms also may be not disposed directly on the substrateinstead of through the metal fixing seats. On the other hand, thesesabrasive particles having non-plane bottoms may be corresponded with themetal fixing seats having blind holes at the top, so that thesesabrasive particles having non-plane bottoms are corresponded with themetal fixing seats having blind holes at the top.

In the chemical mechanical polishing conditioner with high performanceof the present invention, these abrasive particles may be artificialdiamonds, nature diamonds, polycrystalline diamonds or cubic boronnitride. In a preferred aspect of the present invention, the abrasiveparticles may be artificial diamonds. Furthermore, in the chemicalmechanical polishing conditioner with high performance of the presentinvention, the abrasive particles may have a particle size of 30 to 2000μm. In an aspect of the present invention, these abrasive particlesdisposed on the metal fixing seats may have larger particle sizes suchas 800 μm; wherein the metal fixing seats may be designed as metal barswith cylindrical shapes and the external diameters of the metal fixingseats may be 1 mm to 10 mm, the external diameters of the metal fixingseats are preferably 3 mm; therefore, 60 to 70 metal fixing seats maygenerally be installed into the substrate of the conditioner havingexternal diameters of 4 inch.

In the chemical mechanical polishing conditioner with high performanceof the present invention, these abrasive particles are fixed directly onthe substrate by the binding layer; alternatively, each abrasiveparticle is disposed on the metal fixing seat and the metal fixing seatis fixed on the substrate by the binding layer; wherein the compositionsof the binding layer may be varied based on the polishing conditions andrequirements, which includes: a ceramic material, a brazing material, anelectroplating material, a metallic material, or a polymer material, butthe present invention is not limited thereto. Besides, in the chemicalmechanical polishing conditioner with high performance of the presentinvention, the polymer material can be epoxy resin, polyester resin,polyacrylic resin, or phenolic resin, and the brazing material can be atleast one selected from the group consisting of iron, cobalt, nickel,chromium, manganese, silicon, aluminum, and combinations thereof. In anaspect of the present invention, the compositions of the binding layerare preferably epoxy resin.

In the chemical mechanical polishing conditioner with high performanceof the present invention, each abrasive particle may be fixed on themetal fixing seat by the abrasive binding layer; wherein thecompositions of the abrasive binding layer may be varied based on thepolishing conditions and requirements, which includes: a ceramicmaterial, a brazing material, an electroplating material, a metallicmaterial, or a polymer material, but the present invention is notlimited thereto. Besides, in the chemical mechanical polishingconditioner with high performance of the present invention, the polymermaterial can be epoxy resin, polyester resin, polyacrylic resin, orphenolic resin, and the brazing material can be at least one selectedfrom the group consisting of iron, cobalt, nickel, chromium, manganese,silicon, aluminum, and combinations thereof. In an aspect of the presentinvention, the compositions of the binding layer are preferablynickel-based metal brazing material.

Besides, in the chemical mechanical polishing conditioner with highperformance of the present invention, the materials and sizes of thesubstrate may be varied based on the polishing conditions andrequirements; wherein the materials of the substrate can be stainlesssteel substrate, mold steel substrate, metal alloy substrate, ceramicmaterial substrate or polymer material substrate or combinationsthereof, but the present invention is not be limited thereto. In apreferred aspect of the present invention, the material of the substratemay be a stainless steel substrate. Further, in the chemical mechanicalpolishing conditioner with high performance of the present invention,the substrate may have a plurality of blind holes, so that the metalfixing seats may be installed into each blind hole.

Another object of the present invention is to provide a method formanufacturing chemical mechanical polishing conditioner with highperformance, the method for manufacturing chemical mechanical polishingconditioner may control the figures of each abrasive particle to achievethe optimum ability of cutting. Besides, theses abrasive particles canavoid limitations of theirs crystal forms based on a condition ofprofiles of a single abrasive particle to obtain an optimum cutting edgeangle.

To achieve the above object, the present invention is to provide amethod for manufacturing chemical mechanical polishing conditioner withhigh performance, comprising: providing a plurality of abrasiveparticles and a substrate having a binding layer; providing a surfaceprocessing treatment to make the abrasive particles have specificcutting edge angles, crystal structures, tip heights, or tiporientations. Further, each abrasive particle may be fixed on thesubstrate by the binding layer; alternatively, each abrasive particle isdisposed on the metal fixing seat and the metal fixing seat is fixed onthe substrate by the binding layer.

In the method for manufacturing chemical mechanical polishingconditioner with high performance, the surface processing treatment maybe a mechanical polishing method, a chemical etching method, or a laserprocessing method; in an aspect of the present invention, the surfaceprocessing treatment may be a mechanical polishing method. Besides, inthe method for manufacturing chemical mechanical polishing conditionerwith high performance, the fixing method of the binding layer may be aceramic sintering method, a brazing method, an electroplating method, ametal sintering method, or a polymer hardening method, but the presentinvention is not limited thereto. In an aspect of the present invention,the fixing method of the binding layer is the polymer hardening method.

In the method for manufacturing chemical mechanical polishingconditioner with high performance, each abrasive particle is disposed onthe metal fixing seat, and the metal fixing seats are fixed on thesubstrate by the binding layer; wherein each abrasive particle is fixedon the metal fixing seat by the abrasive binding layer, and the fixingmethod of the abrasive binding layer may be a ceramic sintering method,a brazing method, an electroplating method, a metal sintering method, ora polymer hardening method. In an aspect of the present invention, thefixing method of the abrasive binding layer is metal brazing method.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and other advantages of thepresent invention will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings, in which:

FIG. 1A shows a block flow diagram of a chemical mechanical polishingconditioner with high performance of the present invention.

FIG. 1B shows a schematic diagram of a chemical mechanical polishingconditioner with high performance of the present invention.

FIGS. 2A to 2D show schematic diagrams of the chemical mechanicalpolishing conditioner with high performance according to Example 2 ofthe present invention.

FIGS. 3A to 3D show schematic diagrams of the chemical mechanicalpolishing conditioner with high performance according to Example 3 ofthe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereinafter, the actions and the effects of the present invention willbe explained in more detail via specific examples of the invention.However, these examples are merely illustrative of the present inventionand the scope of the invention should not be construed to be definedthereby.

Example 1

Please refer to FIGS. 1A and 1B, FIG. 1A shows a block flow diagram of achemical mechanical polishing conditioner with high performance of thepresent invention, and FIG. 1B shows a schematic diagram of a chemicalmechanical polishing conditioner with high performance of the presentinvention. Please refer to FIGS. 1A and 1B, in the chemical mechanicalpolishing conditioner with high performance according to Example 1 ofthe present invention, first, these abrasive particles 12 are disposedon a metal fixing seat (not shown); wherein the these abrasive particles12 are artificial diamonds with particle size of 300 μm. Secondly, theseabrasive particles 12 are performed a surface processing treatment, sothat these abrasive particles have specific cutting edge angle (θ) of 90degree. Please refer to FIG. 1B, theses abrasive particles can avoidlimitations of theirs crystal forms based on a condition of figure of asingle abrasive particle to obtain an optimum cutting edge angle (θ),and the crystal structures of these abrasive particles 12 arehexahedrons. The cutting edge angle (θ) and the crystal structures maybe randomly varied based on the user's requirements or processingconditions. Further, these abrasive particles 12 are separated from themetal fixing seats (not shown); finally, a substrate 10 made ofstainless steel material and a binding layer 11 made of nickel-basedmetallic brazing material are provided, and these abrasive particles 12are fixed on the binding layer 12 by a heat brazing method, and then thebinding layer is fixed on the substrate 10 to form a chemical mechanicalpolishing conditioner 1 with high performance of the present invention,as shown in FIG. 1B; wherein these abrasive particles 12 are disposed byusing a known diamond distribution technique (for example, templatedistribution), and the spacing and arrangement of the abrasive particles12 are controlled by the template (not shown in figures). Besides, theseabrasive particles 12 have the same tip heights and these abrasiveparticles 12 all have tips upwards to form tip directionality;alternatively, the abrasive particles 12 are modified based on theuser's requirements or polishing processing conditions to have the sametip directionality or different tip directionality.

Example 2

Please refer to FIG. 2, FIG. 2 shows schematic diagrams of the chemicalmechanical polishing conditioner with high performance according toExample 2 of the present invention. The device of the chemicalmechanical polishing conditioner 20 with high performance of Example 2is substantially the same as the above Example 1, but the differencesare that the abrasive particles 12 of Example 1 are fixed directly onthe substrate by the binding layer 11, and the abrasive particles 22 ofExample 2 are disposed on the metal fixing seat 23. Please refer to FIG.2A, each abrasive particle 22 is disposed on the metal fixing seat 23having plane top; wherein these abrasive particles 22 are artificialdiamonds with particle size of 800 μm. Besides, the metal fixing seat 23having the plane top is a cylinder figure of which the external diameteris 3 mm and each abrasive particle 22 is fixed on the metal fixing seat23 having plane top by the abrasive binding layer (not shown in figures)made of metal brazing alloy. Further, please refer to FIG. 2B, theseabrasive particles 22 are performed a surface processing treatment, sothat abrasive particles 22 have cutting edge angle (θ) of 90 degree. Thecutting edge angle may be randomly varied based on the user'srequirements or polishing processing conditions. Finally, please referto FIG. 2C, the metal fixing seat 23 with the plane top is installedinto the substrate with a plurality of blind holes, and the metal fixingseat 23 with the plane top is fixed on the substrate 20 by the bindinglayer 21, as shown in FIG. 2C; alternatively, please refer to FIG. 2D,the metal fixing seat 23 with the plane top is installed into thesubstrate with a plurality of through holes, and the metal fixing seat23 with the plane top is fixed on the substrate 20 by the binding layer21 to form a chemical mechanical polishing conditioner 2 with highperformance of the present invention. Please refer to FIG. 2D, thebinding layer 21 is not present on the front of the substrate, in anaspect of the present invention, 70 metal fixing seats 23 with the planetops may installed into the 4 inch substrate.

Example 3

Please refer to FIGS. 3A to 3C, FIGS. 3A to 3C show schematic diagramsof the chemical mechanical polishing conditioner with high performanceaccording to Example 3 of the present invention. The device of thechemical mechanical polishing conditioner with high performance ofExample 3 is substantially the same as the above Example 2, but thedifferences are that these abrasive particles having plane bottoms aredisposed on the metal fixing seat with plane tops in Example 2, butthese abrasive particles having non-plane bottoms are disposed on themetal fixing seat with blind holes at top, so that these abrasiveparticles having non-plane bottoms are corresponded to the metal fixingseat with blind holes at top. Please refer to FIG. 3A, first, thesesabrasive particles 32 having non-plane bottoms are disposed on the metalfixing seat 33 with blind holes at top; wherein theses abrasiveparticles 32 are artificial diamonds with particle size of 800 μm, andthe metal fixing seats 33 are cylinder figures of which the externaldiameter is 3 mm, and each abrasive particles 32 is fixed on the metalfixing seat 33 having blind holes at top by the abrasive binding layer(not shown in figures) made of metal brazing alloy. Further, pleaserefer to FIG. 3B, theses abrasive particles 32 are performed a surfaceprocessing treatment, so that the abrasive particles 32 have cuttingedge angle (θ) of 90 degree; alternatively, cutting edge angle of theseabrasive particles 22 may be randomly varied based on the user'srequirements or processing conditions. Finally, please refer to FIG. 3C,theses abrasive particles 32 with non-plane bottoms and the metal fixingseats with blind holes at top are installed into the substrate having aplurality of blind holes 34, and the metal fixing seats 33 with blindholes at top are fixed on the substrate by the binding layer 31 to formthe chemical mechanical polishing conditioner 3 with high performance ofthe present invention. Alternatively, please refer to FIG. 3D, the metalfixing seat 33 having plane top is installed into the substrate having aplurality of through holes 35, and the metal fixing seat 33 having planetop is fixed on the substrate 30 by the binding layer 31 to form thechemical mechanical polishing conditioner 3 with high performance of thepresent invention. Please refer to FIG. 3D, the binding layer 31 is notpresent on the front of the substrate; besides, these abrasive particles32 are controlled by the metal fixing seats so that have these abrasiveparticles 32 have the same tip heights or different tip heights.

In the chemical mechanical polishing conditioner with high performanceof the present invention, in an Example, these abrasive particles aredisposed on the substrate; and in another Example, these abrasiveparticles are disposed on the metal fixing seats. The cutting edgeangles, crystal structures, tip heights or tip orientations may berandomly varied based on the user's requirements or processingconditions in the two Examples, thereby controlling the figures of eachabrasive particle, so that these abrasive particles avoid hexoctahedronto manufacture a predetermined form; therefore, an ideal cutting edgeangle is obtained to achieve an optimum polishing performance.

It should be understood that these examples are merely illustrative ofthe present invention and the scope of the invention should not beconstrued to be defined thereby, and the scope of the present inventionwill be limited only by the appended claims.

1. A chemical mechanical polishing conditioner with high performance,comprising: a substrate; a binding layer disposed on the substrate; anda plurality of abrasive particles fixed directly on the substrate by thebinding layer, or each abrasive particle disposed on a metal fixingseat, and the substrate having a plurality of blind holes or a pluralityof through holes, so that the metal fixing seat is installed into theseblind holes or these through holes, and the metal fixing seat is fixedon the substrate by the binding layer; wherein the abrasive particlesare performed a surface processing treatment, so that these abrasiveparticles have specific cutting edge angles, crystal structures, tipheights or tip orientations, or these abrasive particles are notperformed a processing treatment.
 2. The chemical mechanical polishingconditioner with high performance of claim 1, wherein the cutting edgeangles of these abrasive particles are 30 degrees to 150 degrees.
 3. Thechemical mechanical polishing conditioner with high performance of claim2, wherein the cutting edge angles of these abrasive particles are 60degrees or 90 degrees.
 4. The chemical mechanical polishing conditionerwith high performance of claim 1, wherein crystal structure of theseabrasive particles is a tetrahedron, a hexahedron, an octahedron or theother shape with specific cutting function.
 5. The chemical mechanicalpolishing conditioner with high performance of claim 1, wherein theseabrasive particles have the same tip heights.
 6. The chemical mechanicalpolishing conditioner with high performance of claim 1, wherein theseabrasive particles have different tip heights.
 7. The chemicalmechanical polishing conditioner with high performance of claim 1,wherein each abrasive particle is fixed on the metal fixing seat by theabrasive binding layer.
 8. The chemical mechanical polishing conditionerwith high performance of claim 1, wherein these abrasive particles haveplane bottom or non-plane bottom.
 9. The chemical mechanical polishingconditioner with high performance of claim 1, wherein the metal fixingseat has a plane top or a blind hole at the top.
 10. The chemicalmechanical polishing conditioner with high performance of claim 1,wherein the abrasive particles are artificial diamonds, nature diamonds,polycrystalline diamonds or cubic boron nitride.
 11. The chemicalmechanical polishing conditioner with high performance of claim 1,wherein the abrasive particles have a particle size of 30 to 2000 μm.12. The chemical mechanical polishing conditioner with high performanceof claim 1, wherein a composition of the binding layer is made of aceramic material, a brazing material, an electroplating material, ametallic material, or a polymer material.
 13. The chemical mechanicalpolishing conditioner with high performance of claim 7, wherein acomposition of the abrasive binding layer is made of a ceramic material,a brazing material, an electroplating material, a metallic material, ora polymer material.
 14. The chemical mechanical polishing conditionerwith high performance of claim 12, wherein the brazing material is atleast one selected from the group consisting of iron, cobalt, nickel,chromium, manganese, silicon, aluminum, and combinations thereof. 15.The chemical mechanical polishing conditioner with high performance ofclaim 12, wherein the polymer material is epoxy resin, polyester resin,polyacrylic resin, phenolic resin.
 16. The chemical mechanical polishingconditioner with high performance of claim 1, wherein the substrate ismade of stainless steel substrate, mold steel substrate, metal alloysubstrate, ceramic material substrate or polymer material substrate orcombinations thereof.
 17. The chemical mechanical polishing conditionerwith high performance of claim 1, wherein the substrate has a pluralityof blind holes, so that the metal fixing seat is installed into eachblind hole.
 18. A method for manufacturing chemical mechanical polishingconditioner with high performance, comprising: providing a plurality ofabrasive particles and a substrate having a binding layer; providing asurface processing treatment to make the abrasive particles havespecific cutting edge angles, crystal structures, tip heights, or tiporientations; and fixing directly each abrasive particle on thesubstrate by the binding layer; or fixing each abrasive particle on themetal fixing seat, so that the metal fixing seat is fixed on thesubstrate by the binding layer.
 19. The method for manufacturingchemical mechanical polishing conditioner with high performance of claim18, wherein the surface process treatment is a mechanical polishingmethod, a chemical etching method, or a laser processing method.
 20. Themethod for manufacturing chemical mechanical polishing conditioner withhigh performance of claim 18, wherein a fixing method of the bindinglayer is ceramic sintering method, a brazing method, an electroplatingmethod, a metal sintering method, or a polymer hardening method.
 21. Themethod for manufacturing chemical mechanical polishing conditioner withhigh performance of claim 18, wherein each abrasive particle is fixed onthe metal fixing seat by the abrasive binding layer.
 22. The method formanufacturing chemical mechanical polishing conditioner with highperformance of claim 21, wherein the fixing method of the abrasivebinding layer is ceramic sintering method, a brazing method, anelectroplating method, a metal sintering method, or a polymer hardeningmethod.